| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve a problem that electrical characteristics and reliability of a thin film transistor are eroded by diffusion of an impurity element into a channel region; and provide a thin film transistor in which aluminum atoms are unlikely to diffuse in an oxide semiconductor layer.SOLUTION: A thin film transistor 150 having an oxide semiconductor layer containing indium, gallium and zinc includes a source electrode layer and a drain electrode layer (117a, 117b) in which first conductive layers (114a, 114b) each containing aluminum as a first component and second conductive layers (115a, 115b) each composed of a high-melting-point metal material are laminated. By bringing the oxide semiconductor layer 113 into contact with the second conductive layers (115a, 115b) and barrier layers (116a, 116b) which contain an aluminum oxide as a first component, diffusion of aluminum atoms into the oxide semiconductor layer 113 is prevented.</p> |
