| 发明名称 |
TiN FILM FORMING METHOD AND STORAGE MEDIUM |
| 摘要 |
A TiN film forming method repeatedly performs for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying a Ti-containing gas and a nitriding gas into the processing chamber, and forming a TiN film on a surface of the substrate by generating a plasma of the supplied gases. The TiN film forming method includes a Ti film forming step of forming a Ti film by supplying a processing gas containing Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates. |
| 申请公布号 |
US2014206189(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
US201414156372 |
申请日期 |
2014.01.15 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
YAMASAKI Hideaki;OKABE Shinya;YAMAMOTO Takeshi;ONISHI Toru |
| 分类号 |
H01L21/285 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A TiN film forming method for repeatedly performing, for a plurality of substrates to be processed, a step of loading each substrate into a processing chamber, supplying a Ti-containing gas and a nitriding gas into the processing chamber, and forming a TiN film on a surface of the substrate by generating a plasma of the supplied gases, the method comprising:
a Ti film forming step of forming a Ti film by supplying a processing gas containing Ti-containing gas into the processing chamber in a state where no substrate exists in the processing chamber after the TiN films are formed on a predetermined number of the substrates. |
| 地址 |
Tokyo JP |
