STRAIN INDUCED REDUCTION OF SWITCHING CURRENT IN SPIN-TRANSFER TORQUE SWITCHING DEVICES

摘要

Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ to increase the perpendicular magnetic anisotropy. Consequently, reduced switching current of the MTJ results. The directed static strain/stress on the MTJ is induced in a controlled direction and/or with a controlled magnitude during fabrication. The MTJ is permanently subject to a predetermined directed stress and permanently includes the directed static strain/strain that provides reduced switching current.

主权项

1. A method of fabricating a magnetic tunnel junction (MTJ) device with reduced switching current, the method comprising:
depositing an MTJ film; patterning the MTJ film to form an MTJ; depositing a stress-strain film against the MTJ; patterning the stress-strain film in a pattern that induces a directed static strain and/or stress in the MTJ; and patterning an oxide spacer between the MTJ and the stress-strain film, the oxide spacer having an angled surface configured to apply a desired direction of the directed static strain and/or stress.