| 发明名称 |
SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM AND PROCESS FOR MANUFACTURING SAME |
| 摘要 |
<p>A sputtering target which consists of oxides that contain indium (In), tin (Sn), zinc (Zn) and aluminum (Al) and which comprises a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10), a bixbyite structure compound represent by In2O3 and a spinel structure compound represented by Zn2SnO4.</p> |
| 申请公布号 |
WO2014112369(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
WO2014JP00149 |
申请日期 |
2014.01.15 |
| 申请人 |
IDEMITSU KOSAN CO.,LTD. |
发明人 |
EBATA, KAZUAKI;TAJIMA, NOZOMI |
| 分类号 |
C23C14/34;C04B35/00;C04B35/453;H01L21/336;H01L21/363;H01L29/786 |
主分类号 |
C23C14/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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