| 摘要 |
<p>Provided are an LED chip and a manufacturing method thereof. The method for manufacturing the LED chip comprises: forming an epitaxial layer (102) on one side of a sapphire substrate (101); forming prismoids (201) disposed in an array on the other side of the sapphire substrate; and forming a reflecting layer (105) on the side where the prismoids are formed, of the sapphire substrate. In this manner, an emergence angle of light on the surface of the LED chip is changed by means of secondary reflection on the reflecting layer; the reflecting layer and the light-emitting surface of the LED cannot form a waveguide structure; and the probability of total reflection is reduced, thereby achieving the objective of improving the light precipitation rate.</p> |
