发明名称 PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, AND SEMICONDUCTOR DEVICE
摘要 A semiconductor wafer, includes: a plurality of element regions; a surface electrode that is disposed in each of the plurality of element regions; an insulating layer that is disposed in each of the plurality of element regions and of which height from a front side surface of the semiconductor wafer is higher than that of the surface electrode in a periphery of the surface electrode; and a dicing line groove that is formed in a front side surface of the semiconductor wafer, that surrounds the surface electrode with the insulating layer therebetween, of which height from the front side surface of the semiconductor wafer is lower than that of the insulating layer, and that extends to a perimeter of the semiconductor wafer; in which the insulating layer is formed with a communication passage that extends from a side of the surface electrode to the dicing line groove.
申请公布号 US2014203411(A1) 申请公布日期 2014.07.24
申请号 US201314134325 申请日期 2013.12.19
申请人 KATO Kunihito;ONISHI Toru 发明人 KATO Kunihito;ONISHI Toru
分类号 H01L23/544;H01L29/40;H01L21/683;H01L21/78 主分类号 H01L23/544
代理机构 代理人
主权项 1. A production method of a semiconductor device, comprising: forming, in each of a plurality of element regions disposed in a semiconductor wafer, a surface electrode and an insulating layer in a periphery of the surface electrode of which height from a front side surface of the semiconductor wafer is higher than that of the surface electrode; forming, in the front side surface of the semiconductor wafer, a dicing line groove that surrounds the surface electrode with the insulating layer therebetween, of which height from the front side surface of the semiconductor wafer is lower than that of the insulating layer, and that extends to a perimeter of the semiconductor wafer; forming, in the insulating layer, a communication groove that extends from a side of the surface electrode to a position where the dicing line groove is formed; attaching a protective tape to a front side of the semiconductor wafer in which the dicing line groove and the communication groove are formed; and processing a back side of the semiconductor wafer that is attached the protective tape.
地址 Nisshin-shi JP