FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES

摘要

In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first gate trench and the second gate trench. The structure can include a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening. The conductor layer can form a Schottky contact with the semiconductor region.

主权项

1. A structure comprising:
an epitaxial layer disposed on a substrate including silicon carbide; a gate trench extending into a semiconductor region of a first conductivity type; a source region of the first conductivity type disposed on a side of the gate trench; a shield electrode disposed in a bottom portion of the gate trench, the shield electrode being insulated from the semiconductor region by a shield dielectric layer; a gate electrode disposed over the shield electrode in the gate trench, the gate electrode and the shield electrode having an inter-electrode dielectric layer therebetween; a dielectric cap disposed over the gate electrode; and a conductor layer contacting the source region and the semiconductor region such that the conductor layer forms a Schottky contact with the semiconductor region.