Vertical Tunneling Field-Effect Transistor Cell and Fabricating the Same

摘要

A tunneling field-effect transistor (TFET) device is disclosed. A frustoconical protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. A drain region is disposed over the substrate adjacent to the frustoconical protrusion structure and extends to a bottom portion of the frustoconical protrusion structure as a raised drain region. A gate stack is disposed over the substrate. The gate stack has a planar portion, which is parallel to the surface of substrate and a gating surface, which wraps around a middle portion of the frustoconical protrusion structure, including overlapping with the raised drain region. An isolation dielectric layer is disposed between the planar portion of the gate stack and the drain region. A source region is disposed as a top portion of the frustoconical protrusion structure, including overlapping with a top portion of the gating surface of the gate stack.

主权项

1. A semiconductor device comprising:
a substrate; a frustoconical protrusion structure with a first width disposed over the substrate and protruding out of the plane of substrate; a drain region with a second width disposed over the substrate adjacent to the frustoconical protrusion structure and extending to a bottom portion of the frustoconical protrusion structure as a raised drain region; a gate stack with a third width disposed over the substrate, wherein the gate stack having a planar portion, which is parallel to the surface of substrate and a gating surface, which wraps around a middle portion of the frustoconical protrusion structure, including overlapping with the raised drain region; an isolation dielectric layer disposed between the planar portion of the gate stack and the drain region; and a source region disposed as a top portion of the frustoconical protrusion structure, including overlapping with a top portion of the gating surface of the gate stack.