| 摘要 |
A permanent solid state memory device is disclosed. Recording data in the permanent solid state memory device forms voids in a data layer between a first wire array and a second wire array. Wires of the first wire array extend transversely to wires in the second wire array. The material is made of a carbon allotrope such that when current is passed through the carbon allotrope, the carbon is quickly oxidized (burned) leaving a complete gap (void) where the fuse once was. In other embodiments, the data layer is a metal or metal oxide selected from the following metals: Tungsten (W), Rhenium (Rh), Osmium (Os), Iridium (Ir), Molybdenum (Mo), Ruthenium (Ru). Rhodium (Rh), Chromium (Cr), and Manganese (Mn). |
