| 摘要 |
PROBLEM TO BE SOLVED: To provide: a sulfonium salt used in a resist material that provides a favorable pattern having excellent resolution, especially excellent rectangularity of a pattern form, and small roughness in photolithography using as a light source a high energy beam such as ArF excimer laser light and EUV, and is not readily eluted with water in immersion lithography; a resist material that contains the sulfonium salt; and a patterning process using the resist material.SOLUTION: The sulfonium salt is represented by the specified general formula (1a), where R represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms whose at least one or more hydrogen atoms are substituted by fluorine atoms, and Rrepresents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which may have a substituted or interposed heteroatom. |
