METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device comprises the following steps: first, a substrate is provided, a first photo-etching process is carried out with a first photomask to form at least one device structure and a plurality of compensation structures, wherein the first photomask comprises at least one device pattern and a plurality of dummy patterns. A photoresist layer is then formed on the device structure and each compensation structures; a second photo-etching process is then carried out with a second photomask to remove each compensation structure.

主权项

1. A method for forming a semiconductor device, comprising the following steps:
providing a substrate; performing a first photo-etching process with a first photomask to form at least one device structure and a plurality of compensation structures on the substrate, wherein the first photomask comprises at least one device pattern and a plurality of dummy patterns; forming a photoresist layer on the device structure and on each compensation structures, wherein the photoresist layer contacts each device structure and each compensation structure directly; and performing a second photo-etching process with a second photomask to remove each compensation structure.