| 发明名称 |
SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR COMPRISING SAID OXIDE SEMICONDUCTOR THIN FILM |
| 摘要 |
<p>A sputtering target comprising an oxide containing indium (In), gallium (Ga), zinc (Zn), and aluminium (Al), and including a bixbite structure compound indicated by In2O3 and a homologous structure compound indicated by InGaO3 (ZnO)m or InAlO3 (ZnO)m (m being 0.1-10).</p> |
| 申请公布号 |
WO2014112376(A1) |
申请公布日期 |
2014.07.24 |
| 申请号 |
WO2014JP00186 |
申请日期 |
2014.01.16 |
| 申请人 |
IDEMITSU KOSAN CO.,LTD. |
发明人 |
TAJIMA, NOZOMI;EBATA, KAZUAKI |
| 分类号 |
C23C14/34;C23C14/08;H01L21/336;H01L21/363;H01L29/786 |
主分类号 |
C23C14/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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