| 摘要 |
PROBLEM TO BE SOLVED: To enable inhibition of deterioration in a drain current of a TFT element and characteristic variation even when a protection film is formed by a method having a heat treatment process in the case where a self-aligned TFT element using an oxide semiconductor for a channel is manufactured.SOLUTION: A thin film transistor manufacturing method of forming on a substrate 1, at least a gate electrode film 2, a gate insulation film 3, an oxide semiconductor layer (IGZO film 4) and a protection film 5 in this order comprises: causing radiation of excimer laser beams from the substrate 1 side toward the oxide semiconductor layer after forming the protection film 5 when formation of the protection film 5 is associated with a predetermined heat treatment, to achieve a region of the oxide semiconductor layer to have low resistance, which does not overlap the gate electrode film 2 in the line of sight when viewed from the substrate 1 side (the region has high resistance due to the heat treatment at the time of forming the protection film 5). |
