| 摘要 |
PROBLEM TO BE SOLVED: To minimize decrease in uniformity of in-plane composition distribution of a crystal film incident to increase in the number of repetition times of epitaxial growth.SOLUTION: An organic metal vapor growth device includes: a processing container for housing a substrate; a gas supply port opening to one end side of the processing container and supplying material gas thereinto; a gas exhaust port opening to the other end side of the processing container and exhausting the material gas therein; a substrate holder for holding the substrate above a gas passage in the processing container connecting the gas supply port and gas exhaust port so that the processed surface of the substrate is in parallel with the gas passage; and a heating mechanism for heating the substrate in the processing container. An epitaxial growth surface having the same crystal structure as that of the processed surface of the substrate is arranged at least partially in a region of the inner wall of the processing container heated by the heating mechanism on the upstream side of the substrate holder. |
