SRAM VOLTAGE ASSIST

摘要

The disclosure provides for an SRAM array having a plurality of wordlines and a plurality of bitlines, referred to generally as SRAM lines. The array has a plurality of cells, each cell being defined by an intersection between one of the wordlines and one of the bitlines. The SRAM array further includes voltage boost circuitry operatively coupled with the cells, the voltage boost circuitry being configured to provide an amount of voltage boost that is based on an address of a cell to be accessed and/or to provide this voltage boost on an SRAM line via capacitive charge coupling.

主权项

1. An SRAM array, comprising:
a plurality of wordlines and a plurality of bitlines, referred to generally as SRAM lines; a plurality of cells, each cell being defined by an intersection between one of the wordlines and one of the bitlines; and voltage boost circuitry operatively coupled with the cells, the voltage boost circuitry being configured to provide an amount of voltage boost that is based on an address of a cell to be accessed.