发明名称 MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND DETECTING METHOD
摘要 To provide a memory device which can perform verification operation for detecting a memory cell whose data holding time is shorter than a predetermined length, accurately in a short time. Each memory cell includes at least a first capacitor, a second capacitor, and a transistor which functions as a switching element for controlling supply, storage, and release of charge in the first capacitor and the second capacitor. The capacitance of the first capacitor is thousand or more times the capacitance of the second capacitor, preferably ten thousand or more times the capacitance of the second capacitor. In normal operation, charge is stored using the first capacitor and the second capacitor. In performing verification operation for detecting a memory cell whose data holding time is shorter than a predetermined length, charge is stored using the second capacitor.
申请公布号 US2014204655(A1) 申请公布日期 2014.07.24
申请号 US201414225525 申请日期 2014.03.26
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Saito Toshihiko
分类号 G11C11/401 主分类号 G11C11/401
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP