NONVOLATILE RESISTIVE MEMORY DEVICE AND WRITING METHOD

摘要

A writing method for a resistive nonvolatile memory device includes writing data to a resistive nonvolatile memory cell using an up/down write pulse signal when the data is first data type, and writing data to the resistive nonvolatile memory cell using only one of an up write pulse signal and a down write pulse signal when the data is second data type.

主权项

1. A writing method for a resistive nonvolatile memory device, comprising:
writing data to at least one resistive nonvolatile memory cell using an up/down write pulse signal when the data is first data type; and writing data to the at least one resistive nonvolatile memory cell using only one of an up write pulse signal and a down write pulse signal when the data is second data type.