ELECTRONIC DEVICE, METHOD FOR MANUFACTURING SAME, SUBSTRATE STRUCTURE, AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device includes a silicon substrate (1) and an element layer (31). The silicon substrate (1) has a heat dissipation mechanism formed on the rear surface. The element layer (31) is formed on a front surface of the silicon substrate (1) and includes a transistor element (20a). The heat dissipation mechanism has a carbon material, for example, CNT (4) and a carbon material, for example, a multilayer graphene film. The carbon material exemplified by the CNT (4) is a highly thermal conductive material formed in a plurality of first holes (1a) formed on a rear surface of the silicon substrate and has a higher thermal conductivity than the silicon substrate (1). The carbon material exemplified by the multilayer graphene film is a thermal conductive film which is thermally connected with the CNT (4) so as to cover the rear surface side of the silicon substrate (1). With this configuration, a carbon-material-embedded silicon substrate dissipating heat at an extremely favorable efficiency with a relatively simple configuration is provided, and a highly reliable electronic device is obtained.