| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine wiring structure having high reliability not affected by conductive residue regarding a wiring structure, a method for forming wiring, and a reconstructed wafer.SOLUTION: After forming Cu-based wiring having Cu as the maximum component on an insulation film by electrolytic plating through an adhesion layer and a plated seed layer, conductive residue generated in a step for removing the plated seed layer is removed by cleaning processing after being oxidized in a step for oxidizing an exposure part of the adhesion layer. |
