| 摘要 |
<p>PROBLEM TO BE SOLVED: To decrease the thickness of a semiconductor integrated circuit which is highly integrated.SOLUTION: The present invention relates to a semiconductor device and a method of manufacturing the semiconductor device, the method comprising the steps of: forming a first semiconductor element layer connected to a first bump, a first structure having a first sheet-like fiber body and a first organic resin, and a first through electrode penetrating the first structure on a substrate; forming a second semiconductor element layer connected to a second bump and a second structure having a second sheet-like fiber body and a second organic resin; forming a third through electrode penetrating a third structure by disposing a conductive resin having metal particles on an uncured third organic resin in a third structure having a third sheet-like fiber body and a third organic resin so that the uncured third organic resin is dissolved and the metal particles move in the third sheet-like fiber body; disposing the first through electrode, the third through electrode, and the second bump so as to overlap with each other on the substrate; and curing the third organic resin.</p> |
