| 摘要 |
PROBLEM TO BE SOLVED: To provide: a sulfonium salt used in a resist material that provides a favorable pattern having excellent resolution, especially excellent rectangularity of a pattern form, and small roughness and does not readily generate a defect in photolithography using a high energy beam as a light source; a resist material that contains the sulfonium salt; and a patterning process using the same.SOLUTION: The sulfonium salt is represented by the specified formula (1a), where each of R and Rindependently represents a hydrogen atom, or a linear, branched or cyclic monovalent hydrocarbon group with 1 to 30 carbon atoms which may have a substituted or interposed heteroatom. |
