SEMICONDUCTOR LASER DEVICE

摘要

The present invention is aimed to prevent occurrence of COD and rapid degradation of light output in semiconductor laser devices. The semiconductor laser device includes a semiconductor laser element 100A and a support member 200. The semiconductor laser element 100a includes a first electrode 13, a substrate 11, and a semiconductor structure 12 having an emitting facet and a reflecting facet, a second electrode 15, and a pad 16, in this order. The semiconductor laser element 100A is connected to a support member 200 at its pad 16 side via a connecting member 300. The emitting-side end portion of the second electrode 15 is spaced apart from the emitting facet of the semiconductor structure 12, and the emitting-side end portion of the pad 16 is located at an outer side than the emitting-side end portion the second electrode 15.

主权项

1. A semiconductor laser device comprising:
a semiconductor laser element comprising a first electrode, a substrate, a semiconductor structure having an emitting facet and a reflecting facet, a second electrode, and a pad disposed on the second electrode, in this order; the second electrode being in contact with a stripe-shaped region on a surface of the semiconductor structure so as to form an optical waveguide from the reflecting facet to the emitting facet in the semiconductor structure; and a support member connected to the pad via a connecting member; wherein an emitting-side end portion of the second electrode is spaced apart from the emitting facet of the semiconductor structure, the pad is disposed extending beyond the emitting side end portion of the second electrode toward the emitting facet side over the semiconductor structure, and the pad is in contact with the second electrode above the stripe-shaped region.