A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200°C.
申请公布号
WO2014085315(A3)
申请公布日期
2014.07.24
申请号
WO2013US71653
申请日期
2013.11.25
申请人
CORNING INCORPORATED;BELLMAN, ROBERT ALAN;CHUANG, TA KO;MANLEY, ROBERT GEORGE;QUESADA, MARK ALEJANDRO;SACHENIK, PAUL ARTHUR
发明人
BELLMAN, ROBERT ALAN;CHUANG, TA KO;MANLEY, ROBERT GEORGE;QUESADA, MARK ALEJANDRO;SACHENIK, PAUL ARTHUR