| 摘要 |
A semiconductor device and a manufacturing method thereof. The semiconductor device comprises: a fin (1004) formed on a substrate (1000); a gate stack formed on the substrate (1000) and intersecting the fin (1004), wherein the gate stack is isolated from the substrate (1000) by the isolating layer (1006); and a penetration blocking portion formed in a region below the fin (1004), wherein the penetration blocking portion comprises a first part (1020) located below the intersecting part of the fin (1004) and the gate stack and a second part (1020') located on two sides of the first part (1020), and the second part (1020') of the penetration blocking portion has a doping concentration lower than that of the first part (1020) of the penetration blocking portion. |
