发明名称 High Selectivity, Low Damage Electron-Beam Delineation Etch
摘要 <p>A method and apparatus for selective etching a substrate using a focused beam. For example, multiple gases may be used that are involved in competing beam-induced and spontaneous reactions, with the result depending on the materials on the substrate. The gases may include, for example, an etchant gas and an auxiliary gas that inhibits etching.</p>
申请公布号 EP2214200(B1) 申请公布日期 2014.07.23
申请号 EP20100152144 申请日期 2010.01.29
申请人 FEI COMPANY 发明人 RANDOLPH, STEVEN;CHANDLER, CLIVE
分类号 H01L21/3065;H01L21/311;H01L21/3213 主分类号 H01L21/3065
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