METHOD FOR FORMING MAGNETIC TUNNELING JUNCTION LAYER OF MAGNETIC RANDON ACCESS MEMORY BY MULTI STEP ETCH PROCESS

摘要

An MTJ formulation step includes the steps of: forming a second interlayer insulating film on a source line and a first interlayer insulating film layer; forming a lower electrode contact by selectively etching the first and second interlayer insulating films; and successively laminating a fixed magnetic film, a tunnel barrier film, a flexible magnetic film, a capping film, and a mask layer and alternatively drying and wetting the respective layers through a multi-step etching process. The present invention can completely remove noble metallic polymers with the wet etching process by alternatively drying and wetting the MJT through a multi-step etching process to acquire a magnetic memory device with excellent magnetic and electrical attributes.