| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of obtaining stable recovery dielectric strength. SOLUTION: A semiconductor chip 1 comprises an outer peripheral region 3 in the outer periphery of an element part 2. The element part 2 has contacts 26 electrically connecting with a semiconductor substrate 13 and a source electrode 24. In one surface 14 of the semiconductor substrate 13, the resistance value per unit area of an end portion 26a of each contact 26 at the outer peripheral region 3 side of the element part 2 is higher than that of a portion of each contact 26 at the element part 2 side. For this reason, since holes accumulated in the outer peripheral region 3 of the semiconductor chip 1 hardly flow into the end portions 26a of the contacts 26, the holes do not concentratively flow into the end portions 26a of the contacts 26 during recovery. This equalizes the flow of the holes from the outer peripheral region 3 to the contacts 26, thereby obtaining the stable recovery dielectric strength. COPYRIGHT: (C)2012,JPO&INPIT |
