| 摘要 |
PROBLEM TO BE SOLVED: To provide a cubic crystal silicon carbide semiconductor substrate on which a high-quality epitaxial film with few crystal defects is formed. SOLUTION: The cubic crystal silicon carbide semiconductor substrate includes a silicon substrate 11 and a cubic crystal silicon carbide epitaxial film 12 formed by epitaxially growing cubic crystal silicon carbide on the silicon substrate 11. The cubic crystal silicon carbide epitaxial film 12 is formed on a first plane 11a to be a crystal plane expressed by Miller index (100) on the silicon substrate 11 in a state that a second axis L2 expressed by Miller index [100] in the cubic crystal silicon carbide epitaxial film 12 is inclined from a first axis L1 expressed by Miller index [100] on the silicon substrate 11 by a predetermined angleΘin a first direction expressed by Miller index [011] on the silicon substrate 11. COPYRIGHT: (C)2011,JPO&INPIT |
