| 摘要 |
PROBLEM TO BE SOLVED: To improve deterioration in characteristics of a transistor based on generation of a parasitic transistor, in a semiconductor device. SOLUTION: This semiconductor device includes a first transistor (400) and a second transistor on a substrate (10). The first transistor (400) includes a first semiconductor layer (410) and a first gate electrode (430). The first semiconductor layer (410) longitudinally formed along a predetermined direction includes a first channel region (410c) including a body part (410c1) wherein an impurity region of first concentration is formed by implanting a predetermined kind of ions, and an edge part (410c2) which is provided along the part extending in the predetermined direction out of the edge part of the body part, and wherein an impurity region of second concentration higher than the first concentration is formed. The first gate electrode (430) is arranged facing the first channel region (410c). The second transistor includes a second semiconductor layer (1a), containing a second channel region (1a') which has the same conductive type as the first channel region and wherein an impurity region of the third concentration higher than the first concentration is formed, and a second gate electrode (3a) arranged facing the second channel region. COPYRIGHT: (C)2010,JPO&INPIT |
