| 摘要 |
<p>Provided is a wafer bonding apparatus which performs pressurization and heating and eliminates nonuniformity of wafer thickness by changing the shape of a pressurizing surface so that planarity of a wafer bonding surface is improved. The wafer bonding apparatus places a plurality of wafers to be bonded between an upper unit (101U) and a lower unit (101L), and bonds the wafers by applying pressure and heat by the upper unit and the lower unit. The wafer bonding apparatus is provided with a top plate (111), a pressure profile control module (131), and a heater section arranged between the top plate and the pressure profile control module for heating. Shape change generated on the surface of the pressure profile control module causes change of the surface of the top plate.</p> |
