| 摘要 |
Disclosed is a light emitting device with improved electrical properties and luminous intensity. The light emitting device according to an embodiment of the present invention includes a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer which is arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer which is arranged between the active layer and the second conductive semiconductor layer. The second conductive semiconductor layer includes a first layer in contact with the electron blocking layer and a second layer which is arranged on the upper side of the first layer. The energy bandgap of the first layer is smaller than the energy bandgap of the second layer. |
