发明名称
摘要 A memory device without additional logic circuits, including a memory cell which cannot be accessed by a third party and which is always accessible when needed. One embodiment is a memory device including a first memory cell and a second memory cell, and the second memory cell includes a second transistor having a second channel formed of an oxide semiconductor film. Data is read from the second memory cell when the second transistor is being irradiated with ultraviolet rays.
申请公布号 JP5560358(B2) 申请公布日期 2014.07.23
申请号 JP20130034153 申请日期 2013.02.25
申请人 发明人
分类号 H01L21/8242;C23C14/08;H01L21/336;H01L21/8247;H01L27/10;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/8242
代理机构 代理人
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