| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride-based semiconductor single crystal which is large-sized and good in crystallinity. SOLUTION: The method for manufacturing a gallium nitride-based semiconductor single crystal includes a step S10 of preparing a seed crystal formed of a mixed crystal containing Ga and N, a step of inverting the polarity of a part of a +c polar region or a -c polar region in the visual field of observation of the surface of the seed crystal from one direction of two directions parallel with the c axis of the seed crystal, and a step S20 of growing a crystal with the +c polar region or the -c polar region containing the part of the inverted polarity as a crystal growth plane to thereby obtain the gallium nitride-based semiconductor single crystal. COPYRIGHT: (C)2013,JPO&INPIT |
