| 摘要 |
The magnetron sputtering source for a coating unit (1), comprises a cathode (3), a target (4) assigned to the cathode or integrated into the cathode, means for producing a coating plasma, and a magnet arrangement (7) for producing a magnetic field for the influence of the coating plasma in such a way that a plasma channel (8) is produced over a part of the surface of the target, which provides coating- and/or treatment material. The magnet arrangement and the surface of the target are movably arranged relatively to each other by a drive. The magnetron sputtering source for a coating unit (1), comprises a cathode (3), a target (4) assigned to the cathode or integrated into the cathode, means for producing a coating plasma, and a magnet arrangement (7) for producing a magnetic field for the influence of the coating plasma in such a way that a plasma channel (8) is produced over a part of the surface of the target, which provides coating- and/or treatment material. The magnet arrangement and the surface of the target are movably arranged relatively to each other by a drive, which is formed for the reduction of the thermal load of the target surface and an exposure time of the plasma on the surface area. The drive is formed for the production of a speed of the relative movement between the magnet arrangement and the surface of the target of 5 m/s. The magnetron sputtering source is adjusted in such a manner that the power density reaches a value of 75 W/cm 2>. The ratio of total surface of the target to the surface of the plasma channel is larger than 90. The adjustment of the relative velocity between the magnet arrangement and the surface of the target depends on the ratio of the size of the total surface of the target to the surface of the plasma channel projected on the target surface and/or on the desired sputtering rate. The magnetron-sputtering source is adjusted in such a manner, that the exposure time of the plasma is subdivided at a defined surface area of the target per coating cycle in two time sections separated from each other. The rectangular target is formed with a length and a width. The length is a multiple of the width. The magnet arrangement and the target are arranged along the direction of the length of the targets relatively movable to each other. The target is formed with a flat and/or curved surface. The magnetron-sputtering source is formed as a rotatable magnetron-tube-sputtering source with rotatable tube target and an anode or anode arrangement for the reception of electrodes to be conducted. The anode and/or anode arrangement has electrodes that are arranged relatively to the target over the movable carrier surface. The target is subdivided into segments decoupled from each other and means are intended that switch a segment as cathode during an adjacent segment is switched as anode. The means for production of plasma has a conducting device having an alternating current, direct current, a unipolar pulse, a bipolar pulse or radio frequency source. Independent claims are included for: (1) a sputtering-coating unit; and (2) a method for coating of substrates. |
