发明名称 BARREL SUSCEPTOR AND EPITAXIAL REACTOR INCLUSING THE SAME
摘要 The present invention relates to a barrel susceptor capable of making an entire wafer placed on a reaction surface of the barrel susceptor, regardless of number, to have a same resistivity value. The barrel susceptor includes a main body including multiple reaction surfaces, while having a pyramid shape of an N-polygon transverse cross section; at least one pocket portion respectively prepared on the reaction surfaces along the length direction on which the wafer is arranged; and multiple partition portions prepared on border edges between reaction surfaces along the length direction, while stretched at a predetermined height from the border edges.
申请公布号 KR20140091906(A) 申请公布日期 2014.07.23
申请号 KR20130003943 申请日期 2013.01.14
申请人 LG SILTRON INCORPORATED 发明人 KIM, JI WON
分类号 H01L21/683;H01L21/20 主分类号 H01L21/683
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