发明名称
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a mask for charged particle beam exposure, the mask preventing a region of a membrane in a minute hole from being impeded by a beam, and suppressing or eliminating the occurrence of thermal flexure, displacement or the like of the membrane caused by heat storage during exposure, and to provide a method of manufacturing the same. <P>SOLUTION: The mask for charged particle beam exposure includes: an upper wafer having a patterned membrane region; and a lower wafer having a patterned membrane region; and has a two-layer structure with the upper wafer and the lower wafer jointed to each other. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP5556107(B2) 申请公布日期 2014.07.23
申请号 JP20090220542 申请日期 2009.09.25
申请人 发明人
分类号 H01L21/027;G03F1/20 主分类号 H01L21/027
代理机构 代理人
主权项
地址