| 摘要 |
According to one embodiment, a semiconductor light emitting device (100, 200, 300, 400, 500) includes: a mounting substrate (150); a semiconductor light emitting element (1, 1a, 1b, 2); a first resin (190); and a second resin (170). The semiconductor light emitting element includes: a semiconductor layer (15) including a light emitting layer (13); a p-side electrode (16); a p-side interconnection unit (41); an n-side electrode (17); and an n-side interconnection unit (43). The first resin covers a periphery of the semiconductor light emitting element on the substrate and contains a phosphorescent substance capable of being excited by emission light of the light emitting layer. The second resin is provided on the first resin layer and the semiconductor light emitting element and contains a fluorescent body (171) capable of being excited by emission light of the light emitting layer to emit light of a different peak wavelength from emission light of the light emitting layer. |
