NONVOLATILE MEMORY DEVICE

摘要

A nonvolatile memory device is provided. The nonvolatile memory device includes a substrate; an active region and a device isolation region which are defined on the substrate; and multiple word lines which interest with the active region. Each word line includes a tunneling insulating layer, a charge storage layer, and a blocking insulating layer which are successively stacked. The device isolation region includes a trench and a field insulating layer which fills the trench. The first surface index of the bottom of the trench has a first interface trap. The second surface index of the bottom of the trench has a second interface trap which is same as or less than the first interface trap.