SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a semiconductor substrate; a drain region which is located in the semiconductor substrate; a body region which is located in the semiconductor substrate and is separated from the drain region; a source region which is located in the body region; and a gate pattern which includes a first gate which is formed on the semiconductor substrate and is adjacent to the source region and a second gate which is adjacent to the drain region. The gate pattern includes a first conductive dopant. The concentration of the first conductive dopant in the first gate is higher than the concentration of the first conductive dopant in the second gate.