| 摘要 |
A production method for silicon monocrystals includes: a step for growing a silicon monocrystal, wherein a seed crystal is brought into contact with a silicon melt and is then pulled up; a step for forming a dislocation-free section in the aforementioned silicon monocrystal, wherein dislocations occurring in said silicon monocrystal are advanced to the radial outside of said crystal and either removed, or annihilated in a loop shape; and a step for forming a straight trunk part, wherein the aforementioned silicon monocrystal, in which dislocation-free section has been formed, is pulled up and allowed to expand to a predetermined diameter. |
