发明名称 |
MEMRISTIVE ELEMENT BASED ON HETERO-JUNCTION OXIDE |
摘要 |
Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal on of the first metal oxide differs from a metal ion of the second metal oxide. The memristive element exhibits a nonlinear current-voltage characteristic in the low resistance state based on the oxide hetero-junction between the first metal oxide and the second metal oxide. Multilayer structures that include the memristive elements also are provided. |
申请公布号 |
KR20140092360(A) |
申请公布日期 |
2014.07.23 |
申请号 |
KR20147013577 |
申请日期 |
2011.10.21 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
YANG JIANHUA;ZHANG MINXIAN MAX;WILLIAMS STANLEY R |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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