RESISTIVE SWITCHING DEVICES HAVING ALLOYED ELECTRODES
摘要
<p>In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode disposed over the switching layer. The top electrode comprises an alloy of a memory metal and an alloying element. The top electrode provides a source of the memory metal. The memory metal is configured to change a state of the switching layer.</p>
申请公布号
EP2756524(A1)
申请公布日期
2014.07.23
申请号
EP20120832202
申请日期
2012.07.13
申请人
ADESTO TECHNOLOGIES CORPORATION;ADESTO TECHNOLOGIES FRANCE SARL
发明人
LEE, WEI TI;GOPALAN, CHAKRAVARTHY;MA, YI;SHIELDS, JEFFREY;BLANCHARD, PHILIPPE;JAMESON, JOHN ROSS;KOUSHAN, FOROOZAN SARAH;WANG, JANET;KELLAM, MARK