发明名称 A SEMICONDUCTOR DEVICE WITH SELF-ALIGNED INTERCONNECTS
摘要 A multilayer device and method for fabricating a multilayer device is disclosed. An exemplary multilayer device includes a substrate, a first interlayer dielectric (ILD) layer disposed over the substrate, and a first conductive layer including a first plurality of conductive lines formed in the first ILD layer. The device further includes a second ILD layer disposed over the first ILD layer, and a second conductive layer including a second plurality of conductive lines formed in the second ILD layer. At least one conductive line of the second plurality of conductive lines is formed adjacent to at least one conductive line of the first plurality of conductive lines. The at least one conductive line of the second plurality of conductive lines contacts the at least one conductive line of the first plurality of conductive lines at an interface.
申请公布号 KR101422944(B1) 申请公布日期 2014.07.23
申请号 KR20120143364 申请日期 2012.12.11
申请人 发明人
分类号 H01L21/28;H01L21/768 主分类号 H01L21/28
代理机构 代理人
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