| 摘要 |
(Solution) A monomer represented by Formula (1), in which R^1 is a hydrogen atom, a methyl group, or a trifluoromethyl group, and R^2 is a hydrogen atom, or an acid unstable group, is disclosed. (Effect) A photoresist layer including a polymer compound containing a repeating unit obtained from the monomer of the present invention and an acid generator, has properties of high solubility with respect to an unexposed portion and low solubility with respect to an exposed portion and has high contrast when forming a positive type pattern by a common alkaline development and forming a positive negative reverse image in the development of an organic solvent. Minute hole pattern may be possibly formed with good dimensional control and high sensitivity by exposing using the photoresist layer and a mask of a grid type pattern and by developing using an organic solvent. |
