Laser diode using zinc oxide nanorods and manufacturing method thereof

摘要

Provided are a laser diode using zinc oxide nanorods and a manufacturing method thereof. The laser diode using zinc oxide nanorods according to one embodiment of the present disclosure includes: a wafer; an electrode layer formed on the wafer; a nanorod layer including a plurality of n-doped zinc oxide nanorods grown on the electrode layer; and a p-doped single crystal semiconductor layer that is physically in contact with the ends of the zinc oxide nanorods.

主权项

1. A laser diode using zinc oxide nanorods, comprising:
a wafer; an electrode layer formed on the wafer; a nanorod layer comprising a plurality of n-doped zinc oxide nanorods grown on the electrode layer; a p-doped single crystal semiconductor layer that is physically in contact with ends of the zinc oxide nanorods; and metal layers formed on a bottom surface of the wafer and on the top surface of the single crystal semiconductor layer, after fixing the single crystal semiconductor layer to the nanorod layer, wherein the p-doped single crystal semiconductor layer is substantially planar and the metal layer is subjected to heat treatment to form ohmic junction.