Method for replacing chlorine atoms on a film layer

摘要

The present invention discloses a method for replacing chlorine atoms on a film layer. More particularly, sufficient replacement ions for replacing the chlorine atoms are formed in a plasma process by reducing a volume ratio of a gas in a gas mixture (i.e. the film layer may be etched with the ions formed by dissociation of the gas) and dissociation of the gas mixture further decreases the etching reaction to the film layer in a process for replacing the chlorine atoms. In comparison to a conventional process by pure oxygen, the present invention can improve the prior art re-etching problem to avoid affecting an electric property of a thin film transistor, also has an advantage of manufacturing time reduction for an increased production yield.

主权项

1. A method for replacing chlorine atoms on a film layer comprising the steps of:
placing a carrier having the film layer into a chamber, the film layer having a plurality of chlorine atoms on a surface thereof, wherein the film layer comprises a metal layer, a semiconductor layer and an insulative layer; passing a first gas and a second gas into the chamber to form a gas mixture, a volume ratio of the second gas being less than one-tenth of the volume ratio of the first gas, wherein the first gas is an oxygen gas, and an electronegativity of an ion formed by dissociating the second gas is greater than an electronegativity of a chloride ion; dissociating the gas mixture by a plasma process to form an ionic mixture, wherein a power condition of the plasma process is 1250 watt to 1750 watt, a pressure condition of the plasma process is 60 mTorr (milliTorr) to 100 mTorr, and a processing time of the plasma process is 10 sec to 15 sec; and bombarding the ionic mixture onto a surface of the film layer, causing the chlorine atoms through a reaction to be replaced by one type of ions of the ionic mixture.