发明名称 |
Conductive layers for hafnium silicon oxynitride |
摘要 |
Electronic apparatus and methods of forming the electronic apparatus include HfSiON for use in a variety of electronic systems. In various embodiments, conductive material is coupled to a dielectric containing HfSiON, where such conductive material may include one or more monolayers of titanium nitride, tantalum, or combinations of titanium nitride and tantalum. |
申请公布号 |
US8785312(B2) |
申请公布日期 |
2014.07.22 |
申请号 |
US201113305338 |
申请日期 |
2011.11.28 |
申请人 |
Micron Technology, Inc. |
发明人 |
Ahn Kie Y.;Forbes Leonard |
分类号 |
H01L21/28;H01L21/314;H01L29/788;C23C16/30 |
主分类号 |
H01L21/28 |
代理机构 |
Schwegman, Lundberg & Woessner, P.A. |
代理人 |
Schwegman, Lundberg & Woessner, P.A. |
主权项 |
1. A method comprising:
forming a dielectric including hafnium silicon oxynitride, the hafnium silicon oxynitride being HfxSiyOzNr with x>0, y>0, z>0, and r>0; forming the hafnium silicon oxynitride doped with one or more elements other than hafnium or silicon, such that the hafnium silicon oxynitride is maintained as a hafnium silicon oxynitride structure, by using a monolayer or partial monolayer sequencing process and by substituting a sequence of the one or more elements for a hafnium sequence of a plurality of hafnium sequences or substituting a sequence of the one or more elements for a silicon sequence of a plurality of silicon sequences in the monolayer or partial monolayer sequencing process such that the one or more elements are included in a completed structure of the hafnium silicon oxynitride; and forming a conductive material coupled to the dielectric. |
地址 |
Boise ID US |