Systems, and devices, and methods for programming a resistive memory cell

摘要

Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that includes a quenching period. The quenching period includes an initial portion and a subsequent portion, with the subsequent portion different than the initial portion. During the initial portion, the amplitude of the programming pulse may be reduced to a first target amplitude level, and during the subsequent portion, the amplitude of the programming pulse may be further reduced to a second target amplitude level.

主权项

1. A method, comprising:
programming a memory cell with a sequence of electrical pulses, wherein the sequence comprises a set electrical pulse, and wherein the sequence also comprises an electrical pulse, wherein the electrical pulse comprises a quenching period including an initial portion and a subsequent portion, wherein the subsequent portion is different than the initial portion.