发明名称 |
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
摘要 |
A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times. The cycle includes forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by supplying a first precursor gas containing the predetermined element and the halogen group and a second precursor gas containing the predetermined element and an amino group to the substrate, for a second predetermined number of times; and forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate and allowing the first layer to react with the borazine compound to modify the first layer under a condition where the borazine ring skeleton in the borazine compound is maintained. |
申请公布号 |
US8785333(B2) |
申请公布日期 |
2014.07.22 |
申请号 |
US201313973714 |
申请日期 |
2013.08.22 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
Hashimoto Yoshitomo;Hirose Yoshiro;Shimamoto Satoshi;Sano Atsushi |
分类号 |
H01L21/31;C23C16/00;H01L21/02;C23C16/455;C23C16/30;H01L21/67 |
主分类号 |
H01L21/31 |
代理机构 |
Volpe and Koenig, P.C. |
代理人 |
Volpe and Koenig, P.C. |
主权项 |
1. A method of manufacturing a semiconductor device, the method comprising forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times, the cycle comprising:
forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by performing supplying a first precursor gas containing the predetermined element and the halogen group to the substrate and supplying a second precursor gas containing the predetermined element and an amino group to the substrate, for a second predetermined number of times; and forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate and allowing the first layer to react with the borazine compound to modify the first layer under a condition in which the borazine ring skeleton in the borazine compound is maintained. |
地址 |
Tokyo JP |