发明名称 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
摘要 A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times. The cycle includes forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by supplying a first precursor gas containing the predetermined element and the halogen group and a second precursor gas containing the predetermined element and an amino group to the substrate, for a second predetermined number of times; and forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate and allowing the first layer to react with the borazine compound to modify the first layer under a condition where the borazine ring skeleton in the borazine compound is maintained.
申请公布号 US8785333(B2) 申请公布日期 2014.07.22
申请号 US201313973714 申请日期 2013.08.22
申请人 Hitachi Kokusai Electric Inc. 发明人 Hashimoto Yoshitomo;Hirose Yoshiro;Shimamoto Satoshi;Sano Atsushi
分类号 H01L21/31;C23C16/00;H01L21/02;C23C16/455;C23C16/30;H01L21/67 主分类号 H01L21/31
代理机构 Volpe and Koenig, P.C. 代理人 Volpe and Koenig, P.C.
主权项 1. A method of manufacturing a semiconductor device, the method comprising forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times, the cycle comprising: forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by performing supplying a first precursor gas containing the predetermined element and the halogen group to the substrate and supplying a second precursor gas containing the predetermined element and an amino group to the substrate, for a second predetermined number of times; and forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate and allowing the first layer to react with the borazine compound to modify the first layer under a condition in which the borazine ring skeleton in the borazine compound is maintained.
地址 Tokyo JP