| 发明名称 | Magnetic memory and method of manufacturing the same | ||
| 摘要 | A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion. | ||
| 申请公布号 | US8787076(B2) | 申请公布日期 | 2014.07.22 |
| 申请号 | US200913061299 | 申请日期 | 2009.08.13 |
| 申请人 | NEC Corporation | 发明人 | Fukami Shunsuke;Ishiwata Nobuyuki;Suzuki Tetsuhiro;Nagahara Kiyokazu;Ohshima Norikazu |
| 分类号 | G11C11/14;G11C11/16;G11C19/08;H01L43/08 | 主分类号 | G11C11/14 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A magnetic memory comprising: a first underlayer; a second underlayer formed on said first underlayer so as to be in contact with said first underlayer; and a data storage layer formed on said second underlayer so as to be in contact with said second underlayer, wherein said data storage layer is a Co/Ni laminated film having perpendicular magnetic anisotropy and has an fcc(111) orientation crystal structure, and a magnetization state of said data storage layer is changed by current driven domain wall motion. | ||
| 地址 | Tokyo JP | ||